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NTTFS5116PL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
? 60
69.7
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 60 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 1
? 6.2
? 3
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 10 V
I D = ? 6 A
37
52
m W
V GS = ? 4.5 V
I D = ? 4.4 A
51
72
Forward Transconductance
g FS
V DS = ? 15 V, I D = ? 6 A
11
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
1258
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = ? 30 V
127
84
Total Gate Charge
Q G(TOT)
V GS = ? 10 V, V DS = ? 48 V, I D = ? 5 A
25
nC
V GS = ? 4.5 V, V DS = ? 48 V, I D = ? 5 A
14
Threshold Gate Charge
Q G(TH)
1
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 48 V, I D = ? 5 A
4
7
Plateau Voltage
Gate Resistance
V GP
R G
3.1
5.3
V
W
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
15
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 4.5 V, V DS = ? 48 V,
I D = ? 5 A, R G = 6 W
58
30
37
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ? 5 A
T J = 25 ° C
T J = 125 ° C
? 0.79
? 0.64
? 1.2
V
Reverse Recovery Time
t RR
20
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = ? 100 A/ m s,
I S = ? 5 A
15
5
Reverse Recovery Charge
Q RR
19
nC
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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